Amorphous Silicon Thin-Film Transistors with Low-Stress Silicon Nitride for Flexible Display
نویسندگان
چکیده
We have developed low-defect, low-stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) at 200°C. The intrinsic stress of this SiNx film is only -12.9 MPa (compressive). Coupled with the low defect (low charge trapping) characteristic of this low-stress SiNx, we are able to demonstrate amorphous silicon thin-film transistors (a-Si TFTs) with nearly threefold increase in mobility μe to 0.87 cm/Vs and 50% decrease in VT to 2.8 V, compared to a control SiNx. The low-stress a-Si TFT technology is amenable to flexible AMOLED and AMEPD display applications.
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